Strained transistor integration for CMOS

ABSTRACT

Various embodiments of the invention relate to a CMOS device having (1) an NMOS channel of silicon material selectively deposited on a first area of a graded silicon germanium substrate such that the selectively deposited silicon material experiences a tensile strain caused by the lattice spacing of the silicon material being smaller than the lattice spacing of the graded silicon germanium substrate material at the first area, and (2) a PMOS channel of silicon germanium material selectively deposited on a second area of the substrate such that the selectively deposited silicon germanium material experiences a compressive strain caused by the lattice spacing of the selectively deposited silicon germanium material being larger than the lattice spacing of the graded silicon germanium substrate material at the second area.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of pending U.S. patent applicationSer. No. 10/747,321 tiled Dec. 23, 2003 entitled “STRAINED TRANSISTORINTEGRATION FOR CMOS” issued as U.S. Pat. No. 7,662,689 on Feb. 16,2010.

FIELD

Circuit devices and the manufacture and structure of circuit devices.

BACKGROUND

Increased performance of circuit devices on a substrate (e.g.,integrated circuit (IC) transistors, resistors, capacitors, etc. on asemiconductor (e.g., silicon) substrate) is typically a major factorconsidered during design, manufacture, and operation of those devices.For example, during design and manufacture or forming of metal oxidesemiconductor (MOS) transistor semiconductor devices, such as those usedin a complementary metal oxide semiconductor (CMOS), it is often desiredto increase movement of electrons in N-type MOS device (NMOS) channelsand to increase movement of positive charged holes in P-type MOS device(PMOS) channels.

BRIEF DESCRIPTION OF THE DRAWINGS

The embodiments of the invention are illustrated by way of example andnot by way of limitation in the figures of the accompanying drawings inwhich like references indicate similar elements. It should be noted thatreferences to “an” embodiment of the invention in this disclosure arenot necessarily to the same embodiment, and they mean at least one.

FIG. 1 is a schematic cross section view of a portion of a semiconductorsubstrate base.

FIG. 2 is the semiconductor substrate of FIG. 1 after forming a layer ofgraded silicon germanium material on the substrate.

FIG. 3 shows the semiconductor substrate of FIG. 2 after forming anelectronically insulating material between areas of the graded silicongermanium material.

FIG. 4 shows the semiconductor substrate of FIG. 1 after selectivedeposition of a layer of silicon material over a first area of thegraded silicon germanium material.

FIG. 5 shows the semiconductor substrate of FIG. 1 after selectivedeposition of a layer of silicon germanium material over a second areaof the graded silicon germanium material, where the silicon germaniummaterial has a higher concentration of germanium than the graded silicongermanium material has at the second area.

FIG. 6 shows the semiconductor substrate of FIG. 1 after forming a layerof high dielectric constant material over the selectively depositedsilicon and the selectively deposited silicon germanium material.

FIG. 7 shows the semiconductor substrate of FIG. 1 after forming an NMOSdevice in the selectively deposited silicon material, and a PMOS devicein the selectively deposited silicon germanium material.

DETAILED DESCRIPTION

FIG. 1 is a schematic cross section view of a portion of a semiconductorsubstrate base. As shown in FIG. 1, silicon base 110 may include, beformed from, or grown from poly-crystal silicon, single crystal silicon,or various other suitable technologies for forming a silicon base orsubstrate, such as a silicon wafer. For example, according toembodiments, base 110 may be formed by growing a single crystal siliconsubstrate base material having thickness HO of between 100 angstroms and1,000 angstroms of pure silicon.

FIG. 2 is the semiconductor substrate of FIG. 1 after forming a layer ofgraded silicon germanium (SiGe) material on the substrate. FIG. 2 showssubstrate material 120 of graded silicon germanium formed on top ofsubstrate base 110. For example, substrate material 120 may be a layerof graded relaxed silicon alloy material formed by chemical vapordeposition (CVD) epitaxial growth of graded relaxed SiGe in a chamber,such as a semiconductor device fabrication chamber. More specifically,such CVD growth may be accomplished by placing substrate base 110 intothe chamber, heating the inside of the chamber to a temperature between500° Celsius and 1,000° Celsius in a hydrogen ambient flow (H₂) ofbetween 5 standard liters per minute (SLM) and 50 SLM, pressurizing thechamber to a pressure between 10 Torr and 200 Torr (e.g., such as eitherby atmospheric or reduced pressure), flowing into the chamber a siliconprecursor (e.g., such as the silicon precursor described herein) at aflow into the chamber of between 50 SCCM and 500 SCCM, and slowlyincreasing a flow of germanium precursor from 0 SCCM to a final valuesufficient to cause upper surface 129 to have a percentage of germaniumbetween 10% and 35% germanium. More particularly, the flow of germaniumprecursor may be increased sufficiently to cause a grading of germaniumfrom 0% initial concentration of germanium, such as at lower surface121, to increase to between 20 and 30% final concentration germanium,such as at upper surface 129 at for instance, a grading rate of changeof germanium concentration of 10% germanium per micrometer in depth(e.g., such as per micrometer in depth of thickness H₃). According toembodiments, it is considered that substrate material 120 may have aconcentration of germanium, such as at upper surface 129, of between 5and 20% final concentration germanium.

Thus, according to embodiments, the grading rate, and/or thickness ofthe graded silicon germanium material may be varied to provide aselected final concentration of germanium at upper surface 129 resultingfrom a selected grading rate initiated at lower surface 121. Moreover,according to embodiments, the grading rate may be established by acontinuous change in grading, a linear change in grading, a non-linearchange in grading, and/or a step-grading change of germaniumconcentration in substrate material 120. Specifically, for example, theflow of germanium precursor can be increased so that the grading rateincreases smoothly and continuously, or so that the grading rate has anabrupt step-grading change of germanium concentration in substratematerial 120 of between 1% and 2% increments every 1,000 to 2,000angstroms. Additionally, according to embodiments, the initial flow ofgermanium precursor, increase in flow of germanium precursor, and finalflow of germanium precursor may be selected and may vary widelydepending on the desired final target concentration of germanium insubstrate material 120 (e.g., such as at upper surface 129), thetemperature used during formation, and the concentration of thegermanium precursor.

For instance, in one embodiment, the germanium precursor may be germane(GeH₄) and may be increased in flow linearly, or non-linearly versustime to achieve a selected grading profile, and may be increased to afinal flow value sufficient to cause upper surface 129 to have aselected percentage of germanium. Also, the germanium precursor may be agermane precursor diluted in H₂, or may be pure germane increased to afinal flow at or below 100 SCCM. In fact, it is possible to increase theflow of germanium precursor to grow a relaxed graded film of silicongermanium with up to 100% germanium at upper surface 129.

Likewise, according to embodiments, substrate material 120 may be gradedrelaxed silicon germanium material having a grading concentration thatincreases from 0% at lower surface 121 to between 10% and 30% at uppersurface 129, at a rate of between 5% and 15% increase in germanium permicrometer in depth (e.g., such as in depth related to thickness H3).Graded relaxed silicon germanium, includes graded silicon germanium in a“relaxed” status such as where the alignment of silicon and germaniummolecules in the SiGe structure (substrate base 110 plus substratematerial 120) have relatively few dislocations, even where thepercentage of Ge grading increases (e.g., such as increasing via smoothor step grading).

Also, according to embodiments, forming graded relaxed silicon germaniummay include flowing between 50 SCCM and 100 SCCM of HCl during CVDepitaxial growth of substrate material 120. For example, a sufficientamount of HCl may be introduced during formation of substrate material120 to increase or improve the planarity of upper surface 129, to reduceor control so-called “cross-hatch” that develops during relaxed silicongermanium growth (e.g., such as to reduce the crisscross strain or gridpattern in or at upper surface 129 that may be attributed to relaxationof silicon germanium molecules during deposition). Furthermore,according to embodiments, although substrate material 120 is describedabove as being formed of graded silicon germanium, substrate material120 may be formed by CVD epitaxial growth, ultrahigh vacuum (UHV) CVDepitaxial growth, and/or molecular beam epitaxy (MBE) epitaxial growthof various appropriate silicon alloys (e.g., such as silicon germanium).Thus, for example, substrate material 120 may be formed by sufficientCVD of various appropriate silicon alloy materials to form a gradedrelaxed layer of silicon alloy material having a thickness between 1 and3 micrometers in thickness, such as by CVD of silicon germanium to formgraded substrate material 120 having a thickness H3 of 2 micrometers inthickness. Moreover, substrate material 120 may be formed by anappropriate layer transfer/bonding techniques, such as a substrate SiGeOn Insulator (SGOI) process where a relaxed SiGe substrate is preparedby growing SiGe on a bulk substrate by an appropriate process and thentransferring a relaxed top layer of the SiGe to a different substrate(e.g., such as to substrate base 110, which may be a silicon oxidewafer) to form substrate material 120. It is also considered thatsubstrate material 120 may be non-graded silicon alloy material.

FIG. 2 also shows substrate material 120 having first area 123 andsecond area 125 of upper surface 129, which are suitable for depositinga transistor device semiconductor channel material onto. For example,FIG. 3 shows the semiconductor substrate of FIG. 2 after forming anelectronically insulating material between areas of the graded silicongermanium material. FIG. 3 shows shallow trench isolation (STI) material130 between first area 123 and second area 125. Although FIG. 3 showsSTI material 130 between first area 123 and second area 125, variousappropriate electronically insulating materials and structuressufficient for isolating a P-type well of a CMOS device from an N-typewell of the CMOS device are contemplated.

Next, according to embodiments, substrate material 120 may be doped atfirst area 123 with one of boron and aluminum to form a P-type wellregion 122 having an electrically positive charge, such as for a an NMOStransistor of a CMOS device. Similarly, substrate material 120 may bedoped at second area 125 with phosphorous, arsenic, and/or antimony toform N-type well region 124 having an electrically negative charge, suchas for a PMOS transistor of a CMOS device. To selectively dope firstarea 123 and second area 125, a mask may be placed over the non selectedarea to block the introduction of deposit into the non selected area.

After P-type well region 122 and N-type well region 124 are formed insubstrate material 120, a layer of silicon material having a thicknesssuitable as a first channel for a first circuit device on first area 123of substrate material 120 may be formed to define a first interfacesurface of substrate material 120. In addition, a layer of silicongermanium material suitable as a second channel for a second circuitdevice on second area 125 of substrate material 120 may be formed todefine a second interface surface of substrate material 120. Forexample, FIG. 4 shows the semiconductor substrate of FIG. 1 afterselective deposition of a layer of silicon material over a first area ofthe graded silicon germanium material. FIG. 4 shows first dielectriclayer 140 formed over second area 125 of substrate material 120.According to embodiments, first dielectric layer 140 may be formed of amaterial such as an etch stop and/or dielectric material, includingsilicon dioxide (SiO₂), silicon nitride (Si₃N₄), an etch stopdielectric, or other suitable dielectric.

After forming first dielectric layer 140, first layer 150 may be formedover first area 123 of substrate material 120. For example, as shown inFIG. 4, first layer 150 is an epitaxial layer of silicon material formedby selective CVD epitaxial growth of tensile strained silicon, such as alayer of silicon experiencing a tensile strain in directions of arrows152 and 154 caused by a lattice spacing of the silicon material beingsmaller than a lattice spacing of the relaxed graded silicon germaniumsubstrate material 120 at first area 123. Selective CVD epitaxial growthof the silicon layer may include placing structure 400 without firstlayer 150, into a chamber, heating the inside of the chamber to atemperature between 600° Celsius and 900° Celsius in a hydrogen ambientflow (H₂) of between 5 SLM and 50 SLM, pressurizing the chamber to apressure between 10 Torr and 200 Torr (e.g., such as by pressurizingeither to atmospheric or reduced pressure), and flowing into the chambera silicon precursor at a flow of between 50 SCCM and 500 SCCM to form anepitaxial layer of silicon material having a thickness H1 between 10nano-meters and 20 nano-meters in thickness. For example, first layer150 may have a thickness sufficient to avoid dislocations, misfits, orthreaded dislocations between first layer 150 and substrate material 120at a first interface defined where first layer 150 is coupled to uppersurface 129 of substrate material 120 at first area 123.

More particularly, forming first layer 150 may include flowingdichlorosilane (SiH₂Cl₂) to selectively deposit silicon material havinga thickness H1 of between 100 angstroms and 1,000 angstroms of puresilicon. Moreover, it is contemplated that forming of first layer 150may include introducing between 50 SCCM and 500 SCCM of HCl, such as byflowing HCl during selective CVD epitaxial growth of tensile strainsilicon (e.g., such as is described above with respect to formingsubstrate material 120). Furthermore, according to embodiments, althoughfirst layer 150 is described above as being formed by CVD epitaxialgrowth, first layer 150 may be formed by other appropriate processesincluding UHV CVD epitaxial growth, SGOI, and/or MBE epitaxial growth,such as those described herein, to form a layer of silicon.

Also, according to embodiments, first layer 150 may include variousother appropriate silicon material that will experience a tensile strainwhen formed on first area 123.

After forming first layer 150, a second dielectric layer may be formedover first layer 150, and then a layer of silicon germanium materialsuitable as a second channel for a second circuit device may be formedon second area 125 of substrate material 120. For example, FIG. 5 showsthe semiconductor substrate of FIG. 1 after selective deposition of alayer of silicon germanium material over a second area of the gradedsilicon germanium material, where the silicon germanium material has ahigher concentration of germanium than the graded silicon germaniummaterial has at the second area. FIG. 5 shows different second layer 160suitable as a second channel for a second circuit device formed onsecond area 125 of graded silicon germanium substrate material 120, andsecond dielectric layer 142 conformally formed over first layer 150 atfirst area 123. According to embodiments, second dielectric layer 142may be formed of a material, by a process, and to a thickness, such asdescribed above for first dielectric layer 140. For example, seconddielectric layer 142 may be conformally deposited over the surface offirst layer 150 in that the thickness of second dielectric layer 142 isconsistent throughout and conforms to the topography of the surface offirst layer 150.

In particular, FIG. 5 shows second layer 160, such as an epitaxial layerof silicon alloy material that may be formed by selective CVD epitaxialgrowth of compressive strained silicon germanium. For example, secondlayer 160 may be formed by selective CVD epitaxial growth by placingstructure 500 without second layer 160 into a chamber, heating thechamber inside to a temperature between 500° Celsius and 800° Celsius ina hydrogen ambient flow (H₂) of between 5 SLM and 50 SLM, pressurizingthe chamber to a pressure between 10 Torr and 200 Torr (e.g., such aspressurizing to atmospheric or reduced pressure), flowing into thechamber a silicon precursor at a flow rate of between 50 SCCM and 500SCCM, and flowing into the chamber a germanium precursor at a flow rateof up to 100 SCCM (undiluted) to cause second layer 160 to have apercentage of germanium between 20% and 60%. Thus, second layer 160 maybe formed, such as with a sufficient percentage of germanium, to causesecond layer 160 to experience a compressive strain in directions ofarrows 162 and 164 due to a lattice spacing of epitaxial layer ofsilicon alloy material being larger than a lattice spacing of gradedsilicon germanium substrate material 120 at second area 125.Specifically, formation of second layer 160 can include flowing agermanium precursor at a rate such that second layer 160 is an epitaxiallayer of silicon germanium material having a thickness H2 of between 10nano-meters and 20 nano-meters in thickness. Therefore, second layer 160may have a thickness sufficient to avoid dislocations, misfits, orthreaded dislocations at a second interface defined by where secondlayer 160 is coupled to upper surface 129 of substrate material 120 atsecond area 125.

It can be appreciated that flowing a silicon precursor for formingsecond layer 160 may include flowing a precursor and/or flowing at arate such as is described above with respect to flowing a siliconprecursor to form substrate base 110 and first layer 150. Moreparticularly, for example, the silicon precursor described above forforming second layer 160 may be dichlorosilane (SiH₂Cl₂) flown at a ratesufficient so that when combined with the flowing of the germaniumprecursor, a silicon germanium material may be formed to provide secondlayer 160 having thickness H2 of between 100 angstroms and 1,000angstroms of silicon germanium material. Likewise, flowing of agermanium precursor described above with respect to forming second layer160 may include flowing a germanium precursor and/or flowing a germaniumprecursor at a flow rate as described above with respect to flowing agermanium precursor to form graded silicon germanium substrate material120. Specifically, for instance, flowing a germanium precursor to formsecond layer 160 may include flowing germane (GeH₄) sufficiently tocause second layer 160 to have a selected percentage of germanium and aselected thickness (e.g., such as by flowing germane as described abovewith respect to forming graded silicon germanium substrate material 120in FIG. 2).

Moreover, it is contemplated that forming second layer 160 may includeintroducing between 50 SCCM and 500 SCCM of HCl, such as is describedabove with respect to forming first layer 150 at FIG. 4. Furthermore,according to embodiments, although second layer 160 is described aboveas being formed of graded silicon germanium, second layer 160 may beformed by CVD epitaxial growth, UHV CVD epitaxial growth, SGOI, and/orMBE epitaxial growth of various appropriate silicon alloys (e.g., suchas silicon germanium).

In addition to the doping at first area 123 and second area 125described above, according to embodiments doping can be done in a“self-aligned” manner, such as a manner without additional masking. Forinstance, first dielectric 140 shown in FIG. 4 may be deposited overwafer 300 of FIG. 3 (e.g., including first area 123 and second area125). Then, resist (e.g., such as a photoresist) may be spun and exposedover P-well 122. The resist is then removed and first dielectric 140 isetched to expose the first area 123 over P-well 122. Next, ionimplantation can be performed to dope P-well 122 (e.g., such as withdopants as described above for doping first area 123). The remainingresist is stripped from wafer 300 and first layer 150 is selectivelydeposited as shown in FIG. 4. Moreover, a similar process can be usedwhen forming second dielectric 142 and second layer 160, to dope secondarea 125 (e.g., such as with dopants as described above for dopingsecond area 125), and resulting in the structure shown in FIG. 5. It canbe appreciated that the order of certain “self-aligned” doping processesmentioned above can be reversed.

Also, according to embodiments, a distinction is drawn with respect tothe increasing percentage or grading concentration of germanium in therelaxed silicon germanium substrate material (e.g., such as substratematerial 120 having a percentage of Ge increase such as a percentage ofGe increasing via smooth or step grading) and the sudden increase ingermanium at an interface between the graded relaxed silicon germaniumsubstrate material and the channel SiGe (e.g., such as the suddenincrease between second layer 160 which has a greater percentage of Geat second area 125 than substrate material 120 by, for example, between10 percent and 30 percent.) Thus, the channel SiGe material (e.g.,second layer 160) may form a coherent alignment with the graded relaxedsubstrate material SiGe (e.g., such as at second area 125 of substratematerial 120; where substrate material 120 may also be in coherentalignment within the graded substrate, such as along thickness H3), butwill experience compressive strains 162 and 164 because of the jump inpercentage in Ge between the channel material and the substratematerial, at the substrate/channel interface (e.g., such as where secondarea 125 contacts second layer 160). Furthermore, although descriptionsabove for forming second layer 160 are focused on forming a layer ofsilicon germanium, according to embodiments, second layer 160 may beformed of various appropriate silicon alloy materials, such as byselective epitaxial CVD of such a material.

It is noted that first layer 150 and/or second layer 160 may be formedafter formation of electronically isolating regions between first area123 and second area 125 (e.g., such as prior to forming STI material130) so that high temperature processes for forming electronicallyisolating regions will not be a factor in reducing selected thickness ofor in inducing relaxation of a tensile strain in first layer 150 and/ora compressive strain in second layer 160. Moreover, it is appreciatedthat selective formation of first layer 150 and/or second layer 160 onfirst area 123 and second area 125 may include a size of first area 123and a size of second area 125 selected to be small enough to increase orprovide sufficient stability of first layer 150 to allow tensile straindeposition on a buffer of relaxed graded silicon germanium substratematerial 120 with a selected percentage of germanium at first area 123,as well as to allow compressive strained deposition of second layer 160on a buffer of relaxed graded silicon germanium substrate material 120having a selected percentage of germanium at second area 125 which isapproximately equal to the percentage of germanium at first area 123.

Also, first layer 150 may be doped with boron and/or aluminum to form aP-type channel region having an electrically positive charge, (e.g., seefirst dielectric layer 140 above) and second layer 160 may be doped withphosphorous, arsenic, and/or antimony to form an N-type channel regionhaving an electrically negative charge. For example, first layer 150and/or second layer 160 may be doped by introducing the dopantsidentified above during deposition of, or doping with the dopantsidentified above after deposition of first layer 150 and/or second layer160. Thus, first layer 150 and/or second layer 160 may be doped with asufficient amount of an appropriate type of dopant to form a P-typechannel region and/or a P-type channel region, respectively, such as fora NMOS and/or PMOS device, respectively, such as for a CMOS circuit.Specifically, for example, first layer 150 and/or second layer 160 maybe doped with between 1.0 exponential to the 17th and 1.0 exponential tothe 18th of dopant particles per cubic centimeter of channel material.Thus, such doping may be performed with less than an amount of dopantparticles that would result in degraded carrier mobility due toexcessive impurity scattering.

After formation of second layer 160, a third dielectric layer may beformed over first layer 150 and different second layer 160. For example,FIG. 6 shows the semiconductor substrate of FIG. 1 after forming a layerof high dielectric constant material over the selectively depositedsilicon and the selectively deposited silicon germanium material. FIG. 6shows third dielectric layer 144, such as a layer of dielectric materialhaving a relatively high dielectric constant (e.g. “a high Kdielectric”, having a K greater than or equal to 3.9 and/or the K ofsilicon dioxide (SiO₂)), which may be between 2 and 4 nano-meters inthickness, formed over first layer 150 and second layer 160. Thirddielectric layer 144 may be formed by atomic layer deposition (ALD) suchas by ALD of silicon dioxide (SiO₂), hafnium oxide (HfO), hafniumsilicate (HfSiO₄), hafnium disilicate (HfSi₄O₇), zirconium oxide (ZrO),zirconium silicate (ZrSiO₄), tantalum oxide (Ta₂O₅).

FIG. 7 shows the semiconductor substrate of FIG. 1 after forming an NMOSdevice in the selectively deposited silicon material, and a PMOS devicein the selectively deposited silicon germanium material. FIG. 7 showsfirst layer 150 doped to form P-type channel region 176, and secondlayer 160 doped to form N-type channel region 186. FIG. 7 also showsNMOS device 178 having N-type gate electrode 170 on a surface of thirddielectric layer 144 over first layer 150 (e.g., N-type gate electrode170 having an electrically negative charge), N-type first junctionregion 172 and second junction region 174 in first layer 150 adjacent toN-type gate electrode 170 (e.g., such as N-type first junction region172 and second junction region 174 having an electrically negativecharge). FIG. 7 also shows NMOS spacers 712 and 714 formed on surfacesof N-type gate electrode 170. Likewise, FIG. 7 shows PMOS device 188having P-type gate electrode 180 on a surface of third dielectric layer144 over second layer 160 (e.g., such as wherein P-type gate electrode180 has an electrically positive charge), and P-type first junctionregion 182 and P-type second junction region 184 in second layer 160adjacent P-type gate electrode 180 (e.g., such as where P-type firstjunction region 182 and second junction region 184 have an electricallypositive charge). FIG. 7 also shows PMOS spacers 412 and 414 formed onsurfaces of P-type gate electrode 180.

Thus, according to embodiments, first layer 150 may be formed suitableas P-type channel region 176 for NMOS device 178 on first area 123 ofsubstrate material 120, first layer 150 having a first material with afirst lattice spacing different (e.g., such as smaller) than a substratelattice spacing of a substrate material defining a first interfacesurface of the substrate (e.g., such as at first area 123). Similarly,second layer 160 may be formed suitable as N-type channel region 186 forPMOS device 188 on a different second area 125 of substrate material120, second layer 160 having a different second material with a secondlattice spacing different than the first lattice spacing of the firstlayer and different than the substrate lattice spacing of the substratematerial (e.g., such as by the second lattice spacing having a largerlattice spacing than the substrate material), where the second layerdefines a second interface surface of the substrate (e.g., such as atsecond area 125). Notably, the difference between the first latticespacing of first layer 150 and the substrate lattice spacing at firstarea 123 may define a tensile strain in the direction of arrows 152 and154 in first layer 150, which is sufficient to enhance or increaseelectron mobility in first layer 150 (e.g., such as by at least 50, 75,80, or 85 percent). Similarly, the difference between the second latticespacing of second layer 160 and the substrate lattice spacing at secondarea 125 may define a compressive strain in the direction shown byarrows 162 and 164 in second layer 160, which is sufficient to enhanceor increase hole mobility in second layer 160 (e.g., such as by at least50, 80, 90, 100, or 110 percent).

Furthermore, it can be appreciated that the tensile strain in firstlayer 150 may be a bi-axial tensile strain such as to stretch or expandfirst layer 150 outward in the direction of arrows 152 and 154, as wellas in the direction of an arrow pointing towards the viewer and awayfrom the cross sectional surface of first layer 150 shown in FIGS. 5-7.Likewise, it can be appreciated that the compressive strain in secondlayer 160 may be a bi-axial compressive strain such as to contract orsqueeze second layer 160 inward in the direction of arrows 162 and 164,as well as in the direction of an arrow pointing away from the viewerand towards the cross sectional surface of second layer 160 shown inFIGS. 5-7. More particularly, the thickness of substrate material 120,and concentration of germanium at upper surface 129, thickness of firstlayer 150, thickness of second layer 160 and percentage of germanium insecond layer 160 may be selected as described herein so that a twodimensional coherent tensile strain is induced in first layer 150 frombonding of first layer 150 at first area 123 to substrate material 120(e.g., such as a coherent strain caused by the atomic structure of thematerial of first layer 150 lining up with the atomic structure ofsubstrate material 120 at first area 123, even though the material offirst layer 150 has a lattice alignment of a smaller lattice spacingthan that of first area 123). Similarly, the selections above can bemade so that a two dimensional coherent compressive strain is induced insecond layer 160 from bonding of second layer 160 to substrate material120 at second area 125 (e.g., such as a coherent strain caused by theatomic structure of the material of second layer 160 lining up with theatomic structure of substrate material 120 at second area 125, eventhough the material of second layer 160 has a lattice alignment of alarger lattice spacing than that of second area 125).

Consequently, for a substrate material of Si_(1-X)Ge_(X), a firstmaterial of Si, and a second material of Si_(1-Y)Ge_(Y), where 10Xrepresents the percentage of germanium in the graded silicon germaniumsubstrate material 120 at first area 123 and second area 125, and 10Yrepresents the percentage of germanium in second layer 160 proximate tosecond area 125, X may be less than Y. For instance, X may be between0.1 and 0.3,while Y is between 0.2 and 0.6. In some embodiments, Y maybe between 0.1 and 0.3 larger than X. Moreover, in one embodiment, X maybe 0.2 and Y may be 0.5.

In the foregoing specification, the invention has been described withreference to specific embodiments thereof. However, it will be evidentthat various modifications and changes may be made thereto withoutdeparting from the broader spirit and scope of the invention as setforth in the claims. The specification and drawings are, accordingly, tobe regarded in an illustrative rather than a restrictive sense.

1. An apparatus comprising: a selectively grown first layer of a siliconmaterial suitable as a first channel for a first circuit device on afirst area of a Si_(1-X)Ge_(X) material defining a first interfacesurface of a substrate of graded relaxed silicon germanium material;wherein the layer of silicon material is under a tensile strain causedby a lattice spacing of the silicon material being smaller than alattice spacing of the Si_(1-X)Ge_(X) material at the first interface,wherein X is between 0.1 and 0.3; a selectively grown second layer of aSi_(1-Y)Ge_(Y) material suitable as a second channel for a secondcircuit device on a second area of a Si_(1-X)Ge_(X) material defining asecond interface surface of the substrate of graded relaxed silicongermanium material; wherein the layer of Si_(1-Y)Ge_(Y) material isunder a compressive strain caused by a lattice spacing of theSi_(1-Y)Ge_(Y) material being larger than a lattice spacing of theSi_(1-x)Ge_(x) material at the second interface, wherein X<Y, and Y isbetween 0.2 and 0.6; a gate dielectric layer in contact with theselectively grown silicon material and the selectively grownSi_(1-Y)Ge_(Y) material; and a gate electrode on the gate dielectriclayer.
 2. The apparatus of claim 1, wherein the layer of siliconmaterial is an epitaxial layer of silicon material having a thickness ofbetween 10 nano-meters and 20 nano-meters in thickness; and wherein thelayer of Si_(1-Y)Ge_(Y) material is an epitaxial layer of Si_(1-Y)Ge_(Y)material having a thickness of between 10 nano-meters and 20 nano-metersin thickness.
 3. The apparatus of claim 1, wherein X is 0.2 and Y is0.5.
 4. The apparatus of claim 1, wherein graded relaxed silicongermanium material has one of a thickness of between 1 micrometer and 3micrometers in thickness, a grading concentration of germanium thatincreases from 0 percent to between 10 percent and 30 percent at thefirst and second interfaces, and a grading concentration rate thatincreases at between 5 percent Ge and 15 percent Ge per micrometer indepth.
 5. The apparatus of claim 1, wherein X is between 0.1 and 0.3 tocause a bi-axial coherent tensile strain in the first layer sufficientto increase electron carrier mobility by at least 50 percent; andwherein X<Y, and Y is between 0.2 and 0.6 to cause a bi-axial coherentcompressive strain in the second layer sufficient to increase holecarrier mobility by at least 50 percent.
 6. The apparatus of claim 1,wherein the difference between the first lattice spacing and thesubstrate lattice spacing defines a tensile strain in the first materialand wherein the difference between the second lattice spacing and thesubstrate lattice spacing defines a compressive strain in the secondmaterial.
 7. The apparatus of claim 1, wherein the substrate materialincludes a graded silicon alloy material; wherein the first layerincludes a sufficient thickness of epitaxially deposited pure siliconmaterial to cause a bi-axial coherent tensile strain in the first layersufficient to increase electron carrier mobility by at least 50 percent;and wherein the second layer includes a sufficient thickness ofepitaxially deposited silicon alloy material having a percentage ofalloy to cause a bi-axial coherent compressive strain in the secondlayer sufficient to increase hole carrier mobility by at least 50percent.
 8. The apparatus of claim 1, wherein the substrate material isa graded silicon alloy material having a sufficient thickness and asufficient increase in percentage of alloy to a final alloy percentageat the first and second area to cause a bi-axial tensile strain in thefirst layer and a bi-axial coherent compressive strain in the secondlayer.
 9. The apparatus of claim 1, wherein forming the first layerincludes a sufficient selective chemical vapor deposition of a siliconmaterial to form an epitaxial layer of silicon material on the firstarea.
 10. The apparatus of claim 1, wherein the second layer includes asufficient selective chemical vapor deposition of a silicon alloymaterial to form an epitaxial layer of silicon alloy material on thesecond area.
 11. The apparatus of claim 1, further comprising anelectronically insulating material between the first area and the secondarea prior to forming the first layer; the substrate material doped atthe first area with one of boron and aluminum to form a P-type wellregion having an electrically positive charge; and the substratematerial doped at the second area with one of phosphorous, arsenic, andantimony to form an N-type well region having an electrically negativecharge; a third dielectric layer over the first layer and the differentsecond layer; wherein the third dielectric layer is formed of one ofsilicon dioxide (SiO₂), hafnium oxide (HfO), hafnium silicate (HfSiO₄),hafnium disilicate (HfSi₄O₇), zirconium oxide (ZrO), zirconium silicate(ZrSiO₄), tantalum oxide (Ta₂O₅).
 12. The apparatus of claim 11, furthercomprising: the first layer doped with one of boron and aluminum to forma P-type channel region having an electrically positive charge; thesecond layer doped with one of phosphorous, arsenic, and antimony toform an N-type channel region having an electrically negative charge; anN-type gate electrode on a surface of the third dielectric layer overthe first layer; an N-type first junction region and an N-type secondjunction region in the first layer adjacent the N-type gate electrode; aP-type gate electrode on a surface of the third dielectric layer overthe second layer; a P-type first junction region and an P-type secondjunction region in the second layer adjacent the P-type gate electrode.13. The apparatus of claim 1, wherein the layer of silicon material is alayer of silicon and wherein the layer of Si_(1-Y)Ge_(Y) material is alayer of Si_(1-Y)Ge_(Y).
 14. An apparatus comprising: a selectivelygrown layer of a silicon material suitable as a first channel for afirst circuit device on a first area of a Si_(1-X)Ge_(X) materialdefining a first interface surface of a substrate of graded relaxedsilicon germanium material; wherein the layer of silicon material isunder a tensile strain caused by a lattice spacing of the siliconmaterial being smaller than a lattice spacing of the Si_(1-X)Ge_(X)material at the first interface, wherein X is between 0.1 and 0.3; and alayer of a Si_(1-Y)Ge_(Y) material suitable as a second channel for asecond circuit device on a second area of the Si_(1-X)Ge_(X) materialdefining a second interface surface of the substrate of graded relaxedsilicon germanium material; wherein the layer of Si_(1-Y)Ge_(Y) materialis under a compressive strain caused by a lattice spacing of theSi_(1-Y)Ge_(Y) material being larger than a lattice spacing of theSi_(1-X)Ge_(X) material at the second interface, wherein X<Y, and Y isbetween 0.2 and 0.6, wherein the graded relaxed silicon germaniummaterial has one of a thickness of between 1 micrometer and 3micrometers in thickness, a grading concentration of germanium thatincreases from 0 percent to between 10 percent and 30 percent at thefirst and second interfaces, and a grading concentration rate thatincreases at between 5 percent Ge and 15 percent Ge per micrometer indepth.
 15. The apparatus of claim 14, wherein the layer of siliconmaterial is an epitaxial layer of silicon material having a thickness ofbetween 10 nano-meters and 20 nano-meters in thickness; and wherein thelayer of Si_(1-Y)Ge_(Y) material is an epitaxial layer of Si_(1-Y)Ge_(Y)material having a thickness of between 10 nano-meters and 20 nano-metersin thickness.
 16. The apparatus of claim 14, wherein X is 0.2 and Y is0.5.
 17. The apparatus of claim 14, wherein the layer of siliconmaterial is a layer of silicon and wherein the layer of Si_(1-Y)Ge_(Y)material is a layer of Si_(1-Y)Ge_(Y).
 18. An apparatus comprising: aselectively grown layer of a Si_(1-Y)Ge_(Y) material suitable as achannel for a second circuit device on an area of a Si_(1-X)Ge_(X)material defining an interface surface of a substrate of graded relaxedsilicon germanium material; wherein the layer of Si_(1-Y)Ge_(Y) materialis under a compressive strain caused by a lattice spacing of theSi_(1-Y)Ge_(Y) material being larger than a lattice spacing of theSi_(1-X)Ge_(X) material at the interface, wherein X<Y, and Y is between0.2 and 0.6; and wherein the graded relaxed silicon germanium materialhas one of a thickness of between 1 micrometer and 3 micrometers inthickness, a grading concentration of germanium that increases from 0percent to between 10 percent and 30 percent at the interface, and agrading concentration rate that increases at between 5 percent Ge and 15percent Ge per micrometer in depth.
 19. The apparatus of claim 18,wherein X is 0.2 and Y is 0.5.